APT36GA60BD15 Datasheet, PDF (8/9 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
T_J = 25°C unless otherwise specified
APT36GA60B_SD15
60
50
T_J = 175°C
40
T_J = 125°C
30
20
10
T_J = 25°C
0
T_J = -55°C
0
1
2
3
4
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
700
600
500
T_J =125°C
V_R=400V
30A
400
15A
300
200
7.5A
100
140
120
100
30A
T_J =125°C
V_R=400V
80
15A
7.5A
60
40
20
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
25
T_J =125°C
V_R=400V
20
30A
15
10
15A
7.5A
5
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
Q_rr
1.0
t_rr
0.8
I_RRM
0.6
t_rr
0.4
Q_rr
0.2
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
35
Duty cycle = 0.5
T_J =175°C
30
25
20
15
10
5
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
90
80
70
60
50
40
30
20
10
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature