APT36GA60BD15 Datasheet, PDF (3/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
60
V_GE = 15V
50
T_J= 55°C
T_J= 125°C
40
T_J= 25°C
T_J= 150°C
30
20
10
0
0
1
2
34
5
6
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
300
250μs PULSE
TEST<0.5 % DUTY
CYCLE
250
200
150
100
50
0
0
4
T_J= 25°C
T_J= -55°C
T_J= 125°C
2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
3
I_C = 40A
I_C = 20A
2
I_C = 10A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
280
15V
13V
240
APT36GA60BD_S15
200
12V
160
11V
120
10V
80
9V
40
8V
6V
0
0 4 8 12 16 20 24 28 32
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
16
I_C = 20A
14
T_J = 25°C
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0 10
5
20 30 40 50 60 70 80
GATE CHARGE (nC)
FIGURE 4, Gate charge
90 100
4
3
I_C = 40A
I_C = 20A
2
I_C = 10A
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
70
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature