APTC60AM18SCG Datasheet, PDF (7/7 Pages) Microsemi Corporation – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC60AM18SCG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35 _0.9
0.3
0.7
0.25
0.2 ^0.5
0.15 _0.3
0.1 _0.1
0.05 _0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
160
T_J=25°C
120
T_J=75°C
T_J=175°C
80
T_J=125°C
40
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F Forward Voltage (V)
1600
1400
1200
1000
800
600
400
200
0
200
Reverse Characteristics
T_J=175°C
T_J=125°C
T_J=75°C
T_J=25°C
300 400 500 600 700 800
V_R Reverse Voltage (V)
Capacitance vs.Reverse Voltage
3000
2500
2000
1500
1000
500
0
1
10
100
1000
V_R Reverse Voltage
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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