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APTC60AM18SCG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module | |||
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APTC60AM18SCG
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
VDSS = 600V
RDSon = 18m⦠max @ Tj = 25°C
ID = 143A @ Tc = 25°C
VBUS
Q1
G1
OUT
S1
Q2
G2
Application
⢠Motor control
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
Features
â¢
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
0/VBUS
S2
G1
VBUS
S1
0/VBUS
OUT
⢠Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
S2
Benefits
G2
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
600
V
Tc = 25°C
143
Tc = 80°C
107
A
572
±30
V
18
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
833
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
20
A
1
mJ
1800
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â7
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