APT50GP60LDL Datasheet, PDF (7/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT50GP60LDL(G) UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 124°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
50
150
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 50A
I_F = 100A
I_F = 50A, T_J = 125°C
1.25 1.6
2.0
Volts
1.25
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
52
ns
t_rr
Reverse Recovery Time
-
399
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 50A, di_F/dt = -200A/µs
V_R = 400V, T_C = 25°C
- 1498
nC
-
9
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 50A, di_F/dt = -200A/µs
V_R = 400V, T_C = 125°C
-
649
ns
- 3734
nC
-
13
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
284
I_F = 50A, di_F/dt = -1000A/µs
V_R = 400V, T_C = 125°C
-
5134
-
34
ns
nC
Amps
0.7
0.6
0.5
0.4
0.3
Note:
0.2
0.1
0
10^-5
10^-4
10^-3
10^-2
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
0.316
0.312
0.00467
0.1483
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL