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| APT30GT60BRDL Datasheet, PDF (7/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT | |||
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TYPICAL PERFORMANCE CURVES
APT30GT60BRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise speciï¬ed.
Symbol Characteristic / Test Conditions
APT30GT60BRDL(G) UNIT
IF(AV)
IF(RMS)
IFSM
Maximum Average Forward Current (TC = 100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
30
51
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
VF
Forward Voltage
IF = 30A
IF = 60A
IF = 30A, TJ = 125°C
1.25 1.6
2.0
Volts
1.25
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
trr
Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
64
ns
trr
Reverse Recovery Time
-
317
Qrr
IRRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 30A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
-
962
nC
-
7
-
Amps
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 30A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
-
561
ns
- 2244
nC
-
9
-
Amps
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
264
IF = 30A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
-
3191
-
26
ns
nC
Amps
1.2
1
0.8
0.6
Note:
0.4
t1
0.2
0
10-5
10-4
10-3
10-2
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (°C)
TC (°C)
Dissipated Power
(Watts)
.112
.0005
.437
.450
.0016 0.263
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
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