APT30GT60BRDL Datasheet, PDF (4/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

16
14
V_GE = 15V
12
10
8
6
4
V_CE = 400V
2
T_J = 25°C, or 125°C
R_G = 10Ω
L = 100µH
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
60
R_G = 10Ω, L = 100µH, V_CE = 400V
50
40
30
20
10
T_J = 25 or 125°C,V_GE = 15V
0 _{0 10 20 30 40 50 60 70}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3000
2500
V_CE = 400V
V_GE = +15V
R_G = 10Ω
2000
T_J = 125°C
1500
1000
500
T_J = 25°C
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
4500
4000
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_on2,60A
3500
3000
1500 ^Eoff,60A
E_on2,30A
1000 ^Eoff,^30A
500
E_off,15A
E_on2,15A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT30GT60BRDL(G)
300
250
V_GE =15V,T_J=125°C
200
V_GE =15V,T_J=25°C
150
100
50 V_CE = 400V
R_G = 10Ω
L = 100µH
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
R_G = 10Ω, L = 100µH, V_CE = 400V
140
T_J = 125°C, V_GE = 15V
120
100
80
60
40
T_J = 25°C, V_GE = 15V
20
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2000
V_CE = 400V
V_GE = +15V
R_G = 10Ω
1500
T_J = 125°C
1000
T_J = 25°C
500
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
3000
2500
V_CE = 400V
V_GE = +15V
R_G = 10Ω
E_on2,60A
2000
1500
E_off,60A
1000
500
E_on2,30A
E_off,15A
E_off,30A
0
E_on2,15A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature