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| APT30GP60B2DL Datasheet, PDF (7/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT | |||
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DYNAMIC CHARACTERISTICS
APT30GP60B2DL_LDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise speciï¬ed.
Symbol Characteristic / Test Conditions
APT30GP60B2DL_LDL(G) UNIT
IF(AV)
IF(RMS)
IFSM
Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
30
51
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
VF
Forward Voltage
IF = 30A
IF = 60A
IF = 30A, TJ = 125°C
1.3 1.6
2.0
Volts
1.9
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
trr
Reverse Recovery Time IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
-
64
ns
trr
Reverse Recovery Time
-
317
Qrr
IRRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 30A, diF/dt = -200A/μs
-
962
VR = 400V, TC = 25°C
nC
-
7
-
Amps
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF =30A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
-
561
ns
- 2244
nC
-
9
-
Amps
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
264
IF = 30A, diF/dt = -1000A/μs
-
3191
VR = 400V, TC = 125°C
-
26
ns
nC
Amps
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0 10-5
10-4
10-3
10-2
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
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