APT30GP60B2DL Datasheet, PDF (5/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

TYPICAL PREFORMANCE CURVES
10,000
5,000
C_ies
1,000
500
C_oes
100
50
10
C_res
5
0
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.30
APT30GP60B2DL_LDL(G)
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.25
0.9
0.20
0.7
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
300
100
F_max = min(f_max1, f_{max 2} )
50
f _{max 1}
=
t _d(on)
+
0.05
t _r + t_{d(off )}
+
t_f
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 400V
10 ^RG ^{= 5 Ω}
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
P_diss
=
T_J − T_C
R _θJC
0 10 20 30 40 50 60
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current