APT30GN60BDQ2 Datasheet, PDF (7/9 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
APT30GN60BD_SDQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT30GN60BD_SDQ2(G) UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 111°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
40
63
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 30A
I_F = 60A
I_F = 30A, T_J = 125°C
1.85
2.27
1.5
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
22
ns
t_rr
Reverse Recovery Time
-
25
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 40A, di_F/dt = -200A/µs
V_R = 400V, T_C = 25°C
-
35
nC
-
3
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
160
ns
I_F = 40A, di_F/dt = -200A/µs
V_R = 400V, T_C = 125°C
-
480
nC
-
6
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
85
I_F = 40A, di_F/dt = -1000A/µs
V_R = 400V, T_C = 125°C
-
920
-
20
ns
nC
Amps
0.70
0.60
D = 0.9
0.50
0.7
0.40
0.5
0.30
0.20
0.3
Note:
t1
t2
0.10
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION