APT30GN60BDQ2 Datasheet, PDF (2/9 Pages) Advanced Power Technology – IGBT

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
SSOA
SCSOA
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Input Capacitance
Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GE = 0V, V_CE = 25V
f = 1 MHz
Gate-to-Emitter Plateau Voltage
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Gate Charge
V_GE = 15V
V_CE = 300V
I_C = 30A
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (With Diode) ⁵
Turn-off Switching Energy ⁶
Turn-on Delay Time
T_J = 150°C, R_G = 4.3Ω ⁷, V_GE =
15V, L = 100µH,V_CE = 600V
V_CC = 360V, V_GE = 15V,
T_J = 150°C, R_G = 4.3Ω ⁷
Inductive Switching (25°C)
V_CC = 400V
V_GE = 15V
I_C = 30A
R_G = 4.3Ω ⁷
T_J = +25°C
Inductive Switching (125°C)
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ^{4 4}
Turn-on Switching Energy (With Diode) ⁵⁵
Turn-off Switching Energy ⁶⁶
V_CC = 400V
V_GE = 15V
I_C = 30A
R_G = 4.3Ω ⁷
T_J = +125°C
APT30GN60BD_SDQ2(G)
MIN TYP MAX UNIT
1750
70
pF
50
9.0
V
165
10
nC
90
90
A
6
µs
12
14
ns
155
55
525
565
µJ
700
12
14
ns
180
75
555
950
µJ
895
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJC
W_T
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.74
°C/W
.67
5.9
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R_G is external gate resistance, not including R_Gint nor gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.