APT100GT120JRDL Datasheet, PDF (7/9 Pages) Microsemi Corporation – Resonant Mode IGBT

Typical Performance Curves
APT100GT120JRDL
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT100GT120JRDL Unit
I_F(AV)
I_F(RMS)
Maximum Average Forward Current (T_C = 50°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
I_FSM Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3 ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
60
90
Amps
120
Min Type Max Unit
V_F
Forward Voltage
DYNAMIC CHARACTERISTICS
Symbol Characteristic
I_F = 60A
I_F = 120A
I_F = 60A, T_J = 125°C
1.6
2.1
2.0
Volts
1.25
Test Conditions
Min Typ Max Unit
t_rr
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 1A, di_F/dt = -100A/µs,
V_R = 30V, T_J = 25°C
I_F = 60A, di_F/dt = -200A/µs
V_R = 800V, T_C = 25°C
I_F = 60A, di_F/dt = -200A/µs
V_R = 800V, T_C = 125°C
I_F = 60A, di_F/dt = -1000A/µs
V_R = 800V, T_C = 125°C
-
61
-
ns
-
592
-
-
2694
-
nC
-
9
-
Amps
-
793
-
ns
-
5744
-
nC
-
13
-
Amps
-
286
-
ns
-
6182
-
nC
-
42
-
Amps
0.9
0.8
D = 0.9
0.7
0.6
0.7
0.5
0.5
0.4
Note:
0.3
0.3
0.2
t1
t2
0.1
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-4
10^-3
10^-2
10^-1
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION