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| APT100GT120JRDL Datasheet, PDF (1/9 Pages) Microsemi Corporation – Resonant Mode IGBT | |||
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1200V
APT100GT120JRDL
Resonant Mode IGBT®
The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® of-
fers superior ruggedness and ultrafast switching speed.
Features
Typical Applications
⢠Low Conduction Loss
⢠SSOA Rated
⢠Induction Heating
⢠Low Gate Charge
⢠RoHS Compliant
⢠Welding
⢠Ultrafast Tail Current shutoff
⢠Medical
⢠Low forward Diode Voltage (VF)
⢠Ultrasoft Recovery Diode
⢠High Power Telecom
⢠Resonant Mode Phase Shifted
Bridge
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
Maximum Ratings
Symbol Parameter
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT100GT120JRDL
Unit
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ, TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063â from Case for 10 Sec.
1200
±20
123
67
200
200A @ 1200V
570
-55 to 150
300
Volts
Amps
Watts
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA)
Gate Threshold Voltage (VCE = VGE, IC = 4mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Integrated Gate Resistor
Min Typ Max
1200
-
-
4.5
5.5
6.5
2.7
3.2
3.7
-
4.0
-
-
-
300
-
-
1500
-
-
600
-
5
-
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
Volts
μA
nA
Ω
Microsemi Website - http://www.microsemi.com
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