JANTX2N3439 Datasheet, PDF (6/6 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR

PACKAGE DIMENSIONS
2N3439 thru 2N3440
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.019
0.41
0.48
See note 14
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
.030
.029
.045
.028
.034
.010
45° TP
2.54
0.76
0.74
1.14
0.71
0.86
0.25
45° TP
Note
6
7
8,9
8,9
8,9
8,9
7
5
3,4
3
10
7
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in
and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For transistor types 2N3439 and 2N3440 (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.
LDS-0022, Rev. 4 (111683)
©2011 Microsemi Corporation
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