JANTX2N3439 Datasheet, PDF (3/6 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR

2N3439 thru 2N3440
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
I_C = 10 mA
R_BB1 = 470 Ω; V_BB1 = 6 V
L = 25 mH (min); f = 30 – 60 Hz
Symbol Min. Max. Unit
2N3439 V_(BR)CEO 350
V
2N3440
250
Collector-Emitter Cutoff Current
V_CE = 300 V
V_CE = 200 V
Emitter-Base Cutoff Current
V_EB = 7.0 V
Collector-Emitter Cutoff Current
V_CE = 450 V, V_BE = -1.5 V
V_CE = 300 V, V_BE = -1.5 V
Collector-Base Cutoff Current
V_CB = 360 V
V_CB = 250 V
V_CB = 450 V
V_CB = 300 V
2N3439 I_CEO
2N3440
I _EBO
2N3439 I_CEX
2N3440
2N3439
2N3440 ^ICBO
2N3439
2N3440
2.0 _µA
2.0
10
µA
5.0 µA
5.0
2.0
2.0 µA
5.0
5.0
ON CHARACTERISTICS ⁽¹⁾
Parameters / Test Conditions
Forward-Current Transfer Ratio
I_C = 20 mA, V_CE = 10 V
I_C = 2.0 mA, V_CE = 10 V
I_C = 0.2 mA, V_CE = 10 V
Collector-Emitter Saturation Voltage
I_C = 50 mA, I_B = 4.0 mA
Base-Emitter Saturation Voltage
I_C = 50 mA, I_B = 4.0 mA
Symbol Min. Max. Unit
h _FE
40
160
30
10
V _CE(sat)
0.5
V
V _BE(sat)
1.3
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
I_C = 10 mA, V_CE = 10 V, f = 5.0 MHz
Forward Current Transfer Ratio
I_C = 5.0 mA, V_CE = 10 V, f = 1.0 kHz
Output Capacitance
V_CB = 10 V, I_E = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
V_CB = 5.0 V, I_E = 0, 100 kHz ≤ f ≤ 1.0 MHz
Symbol
|h _fe|
h _fe
C _obo
C _ibo
Min.
3.0
25
Max. Unit
15
10
pF
75
pF
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
LDS-0022, Rev. 4 (111683)
©2011 Microsemi Corporation
Page 3 of 6