English
Language : 

APTGF25X120T3G Datasheet, PDF (6/6 Pages) Microsemi Corporation – 3 Phase bridge NPT IGBT Power Module
APTGF25X120T3G
Capacitance vs Collector to Emitter Voltage
10000
1000
100
Cies
Coes
Cres
10
0
10
20
30
40
50
VCE, Collector to Emitter Voltage (V)
Operating Frequency vs Collector Current
120
100
80
60
40 Hard
switching
20
VCE = 600V
D = 50%
RG = 22Ω
TJ = 125°C
TC= 75°C
0
0
10
20
30
40
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6 0.9
0.5
0.7
0.4
0.5
0.3
0.3
0.2
0.1 0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6-6