APTGF25X120T3G Datasheet, PDF (1/6 Pages) Microsemi Corporation – 3 Phase bridge NPT IGBT Power Module

APTGF25X120T3G
3 Phase bridge
NPT IGBT Power Module
V_CES = 1200V
I_C = 25A @ Tc = 80°C
15
31
16
23
29
19
14
25
30
20
18
22
28 R1
8
4
11
13
7
3
10
12
2
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
Application
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_C = 25°C
40
T_C = 80°C
25
A
I_CM Pulsed Collector Current
T_C = 25°C
100
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
208
W
RBSOA Reverse Bias Safe Operating Area
T_j = 125°C 50A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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