APTC90H12SCTG Datasheet, PDF (6/6 Pages) Microsemi Corporation – Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC90H12SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
2
0.9
1.6
0.7
1.2
0.5
0.8 _0.3
0.4 ^0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
20
T_J=25°C
15
T_J=75°C
10
T_J=125°C
5
T_J=175°C
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F Forward Voltage (V)
Reverse Characteristics
100
75
50
T_J=75°C
25
0
400
T_J=125°C
T_J=175°C
T_J=25°C
600 800 1000 1200 1400 1600
V_R Reverse Voltage (V)
Capacitance vs.Reverse Voltage
700
600
500
400
300
200
100
0
1
10
100
1000
V_R Reverse Voltage
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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