APTC90H12SCTG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC90H12SCTG
Full - Bridge
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
CR1A
VBUS
CR3A
V_DSS = 900V
R_DSon = 120mΩ max @ Tj = 25°C
I_D = 30A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Q1
CR1B CR3B
Q3
Features
•
G1
S1
G2
S2
NTC1
OUT1 OUT2
CR2A
CR4A
CR2B CR4B
Q2
Q4
0/VBUS
G3
S3
G4
S4
NTC2
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
G3
G4
OUT2
S3
S4
• High level of integration
Benefits
VBUS
0/VBUS
OUT1
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
S1
S2
NTC2
G1
G2
NTC1
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
• RoHS Compliant
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
900
V
T_c = 25°C
30
T_c = 80°C
23
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
75
±20
V
120
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
250
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
8.8
A
2.9
1940
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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