APTC80H29T3G Datasheet, PDF (6/6 Pages) Microsemi Corporation – Full - Bridge Super Junction MOSFET Power Module

APTC80H29T3G
Delay Times vs Current
100
td(off)
80
V_DS=533V
60 ^RG=5Ω
T_J=125°C
L=100µH
40
20
td(on)
0
5
10
15
20
25
I_D, Drain Current (A)
Switching Energy vs Current
800
V_DS=533V
700 _RG=5Ω
E_on
600 ^TJ=125°C
L=100µH
500
400
300
200
E_off
100
0
5
10
15
20
25
I_D, Drain Current (A)
Operating Frequency vs Drain Current
400
350
ZVS
V_DS=533V
D=50%
300
R_G=5Ω
250
ZCS
T_J=125°C
T_C=75°C
200
150
100
50
0
4
Hard
switching
6
8
10 12 14
I_D, Drain Current (A)
Rise and Fall times vs Current
50
t_f
40
30
V_DS=533V
R_G=5Ω
20 _TJ=125°C
t_r
L=100µH
10
0
5
10
15
20
25
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
1250
V_DS=533V
1000
I_D=15A
T_J=125°C
E_off
L=100µH
750
500
E_on
250
0
0
E_off
10 20 30 40 50
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
T_J=150°C
10
T_J=25°C
1
0.2
0.6
1
1.4
1.8
V_SD, Source to Drain Voltage (V)
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Technologies AG”.
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