APTC80H29T3G Datasheet, PDF (5/6 Pages) Microsemi Corporation – Full - Bridge Super Junction MOSFET Power Module

Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50
0
50
100 150
T_J, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
50
100
150
T_C, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
10000
Ciss
1000
Coss
100
Crss
10
0
10 20 30 40 50
V_DS, Drain to Source Voltage (V)
APTC80H29T3G
ON resistance vs Temperature
3.0
VGS=10V
2.5 ^{ID= 7.5A}
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T_J, Junction Temperature (°C)
Maximum Safe Operating Area
100
limited by
R_{DS on}
10
100µs
1ms
1 Single pulse
T_J=150°C
T_C=25°C
100ms
0
1
10
100
1000
V_DS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
14
I_D=15A
T_J=25°C
12
10
V_DS=160V
V_DS=400V
8
6
V_DS=640V
4
2
0
0
20
40
60
80 100
Gate Charge (nC)
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