APT50GS60BR Datasheet, PDF (6/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT

APT40DQ60
V_CC
I_C
V_CE
A
D.U.T.
Figure 22, Inductive Switching Test Circuit
Gate Voltage
90%
T_J = 125°C
t_d(off)
90%
t_f
10%
Switching Energy
Collector Voltage
Collector Current
0
Figure 24, Turn-off Switching Waveforms and Definitions
APT50GS60B_SR(G)
Gate Voltage
10%
t_d(on)
t_r
90%
5%
5%
10%
Switching Energy
T_J = 125°C
Collector Current
Collector Voltage
Figure 23, Turn-on Switching Waveforms and Definitions
FOOT NOTE:
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T_J = 25°C, L = 224µH, R_G = 25Ω, I_C = 50A
3 Short circuit time: V_GE = 15V, V_CC ≤ 600V, T_J ≤ 150°C
4 Pulse test: Pulse width < 380µs, duty cycle < 2%
5 C_o(cr) is defined as a fixed capacitance with the same stored charge as C_oes with V_CE = 67% of V_(BR)CES.
6 C_o(er) is defined as a fixed capacitance with the same stored energy as C_oes with V_CE = 67% of V_(BR)CES. To calculate C_o(er) for any value of
V_CE less than V_(BR)CES, use this equation: C_o(er) = 5.57E-8/V_DS^2 + 7.15E-8/V_DS + 2.75E-10.
7 R_G is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
8 E_on1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
9 E_on2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.