APT50GS60BR Datasheet, PDF (3/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT

TYPICAL PERFORMANCE CURVES
150
V_GE = 15V
125
100
75
T_J = 25°C
50
T_J = 125°C
25
T_J = 150°C
0
0
1
2
3
4
5
6
V_CE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics
150
125
250µs PULSE
TEST<0.5 % DUTY
CYCLE
100
75
50
T_J = 25°C
25
T_J = 125°C
I_C = 25A
T_J = 25°C
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
I_C = 100A
4
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3
I_C = 50A
2
I_C = 25A
1
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
5000
C_ies
1000
100
C_oes
C_res
10
0 100 200 300 400 500 600
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
250
T_J = 125°C
225
200
175
APT50GS60B_SR(G)
V_GE = 13 & 15V
11V
150
10V
125
9V
100
8V
75
50
7V
6V
25
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics
6
5
I_C = 100A
4
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I_C = 50A
3
I_C = 25A
2
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
16
14
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0
100
50
100 150 200 250
GATE CHARGE (nC)
FIGURE 6, Gate Charge
90
80
70
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature