APT150GN60B2 Datasheet, PDF (6/6 Pages) Microsemi Corporation – Thunderbolt IGBT

APT100DQ60
V_CC
I_C V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
APT150GN60B2(G)
10%
t_d(on)
Gate Voltage
T_J = 125°C
t_r
Collector Current
90%
5% 10%
Switching Energy
5%
Collector Voltage
Figure 22, Turn-on Switching Waveforms and Definitions
90%
t_d(off)
t_f
Switching Energy
Gate Voltage
90%
T_J = 125°C
Collector Voltage
10%
0
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX^® Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
0.40 (.016)
0.79 (.031)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.