APT150GN60B2 Datasheet, PDF (4/6 Pages) Microsemi Corporation – Thunderbolt IGBT

60
50
V_GE = 15V
40
30
20
10
V_CE = 400V
T_J = 25°C, or 125°C
R_G = 1.0Ω
L = 100μH
0
30 70 110 150 190 230 270 310
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
400
R_G = 1.0Ω, L = 100μH, V_CE = 400V
350
300
T_J = 25 or 125°C,V_GE = 15V
250
200
150
100
50
0
30 70 110 150 190 230 270 310
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
40,000
35,000
V_CE = 400V
V_GE = +15V
R_G = 1.0Ω
30,000
25,000
T_J = 125°C
20,000
15,000
10,000
5,000
T_J = 25°C
0
30 70 110 150 190 230 270 310
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
70,000
60,000
V_CE = 400V
V_GE = +15V
T_J = 125°C
50,000
E_on2,300A
40,000
30,000
20,000
10,000
E_off,300A
E_on2,150A
E_on2,75A
E_off,150A
0
E_off,75A
0
5
10
15
20
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT150GN60B2(G)
600
500
400
300
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
200
100 V_CE = 400V
R_G = 1.0Ω
L = 100μH
0
30 70 110 150 190 230 270 310
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
180
160
T_J = 125°C, V_GE = 15V
140
120
100
80
60
40
T_J = 25°C, V_GE = 15V
20
0 ^{RG = 1.0Ω, L = 100μH, VCE = 400V}
30 70 110 150 190 230 270 310
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
18,000
16,000
V_CE = 400V
V_GE = +15V
R_G = 1.0Ω
14,000
12,000
10,000
T_J = 125°C
8,000
6,000
4,000
2,000
T_J = 25°C
0
30 70 110 150 190 230 270 310
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
40,000
35,000
V_CE = 400V
V_GE = +15V
R_G = 1.0Ω
E_on2,300A
30,000
25,000
20,000
15,000
E_off,300A
10,000
E_on2,150A
5,000
E_off,150A
E_on2,75A
0
E_off,75A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature