APTGT50DH60T1G Datasheet, PDF (5/5 Pages) Microsemi Corporation – Asymmetrical - Bridge Trench + Field Stop IGBT Power Module

APTGT50DH60T1G
Operating Frequency vs Collector Current
120
V_CE=300V
100
D=50%
80
ZVS
R_G=8.2Ω
T_J=150°C
ZCS
T_c=85°C
60
40
20
Hard
switching
0
0
20
40
60
80
I_C (A)
Forward Characteristic of diode
100
80
60
40
T_J=125°C
T_J=150°C
20
T_J=25°C
0
0 0.4 0.8 1.2 1.6 2 2.4
V_F (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.6
1.4 _0.9
Diode
1.2
0.7
1
0.8 ^0.5
0.6 _0.3
0.4
0.1
0.2
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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