APTGT50DH60T1G Datasheet, PDF (4/5 Pages) Microsemi Corporation – Asymmetrical - Bridge Trench + Field Stop IGBT Power Module

APTGT50DH60T1G
Typical Performance Curve
Output Characteristics (V_GE=15V)
100
T_J=25°C
80
T_J=125°C
60
T_J=150°C
40
20
T_J=25°C
0
0 0.5 1 1.5 2 2.5 3
V_CE (V)
Output Characteristics
100
T_J = 150°C
V_GE=19V
80
V_GE=13V
60
V_GE=15V
40
V_GE=9V
20
0
0 0.5 1 1.5 2 2.5 3 3.5
V_CE (V)
Transfert Characteristics
100
80
T_J=25°C
60
40
T_J=125°C
20
T_J=150°C
0
567
T_J=25°C
8 9 10 11 12
V_GE (V)
Energy losses vs Collector Current
3.5
V_CE = 300V
3 V_GE = 15V
Eoff
2.5
R_G = 8.2Ω
T_J = 150°C
2
Er
1.5
1
0.5
Eon
0
0
20
40
60
80 100
I_C (A)
Switching Energy Losses vs Gate Resistance
3
V_CE = 300V
2.5 ^VGE ^=15V
I_C = 50A
Eoff
Eon
2 ^TJ ^{= 150°C}
1.5
1
Er
0.5
Eon
0
5 15 25 35 45 55 65
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
125
100
75
50
V_GE=15V
25 _TJ=150°C
R_G=8.2Ω
0
0 100 200 300 400 500 600 700
V_CE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
IGBT
0.8 ^0.9
0.7
0.6
0.5
0.4
0.3
0.2 _0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
www.microsemi.com
4–5