APTGF50TA120PG Datasheet, PDF (5/6 Pages) Microsemi Corporation – Triple phase leg NPT IGBT Power Module

APTGF50TA120PG
Turn-On Delay Time vs Collector Current
45
V_CE = 600V
40 ^{RG = 5Ω}
V_GE = 15V
35
30
25
0
25
50
75
100
125
I_CE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
180
140
V_CE = 600V
R_G = 5Ω
100
60
V_GE=15V
20
0
25
50
75
100 125
I_CE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
28
24
V_CE = 600V
T_J=125°C,
R_G = 5Ω
V_GE=15V
20
16
12
TJ=25°C,
8
V_GE =1 5V
4
0
0
25
50
75 100 125
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
18
16
V_CE = 600V
V_GE = 15V
14
T_J= 125°C
12
10
Eon, 50A
8
Eoff, 50A
6
Eon, 25A
4
2
Eoff, 25A
0
0
10
20
30
40
50
Gate Resistance (Ohms)
Turn-Off Delay Time vs Collector Current
400
350
V_GE=15V,
T_J=125°C
300
250
VCE = 600V
R_G = 5Ω
200
V_GE=15V,
T_J=25°C
0
25
50
75
100 125
I_CE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
50
T_J = 125°C
40
30
20
0
T_J = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
25
50
75
100 125
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
8
V_CE = 600V
V_GE = 15V
6
R_G = 5Ω
T_J = 125°C
4
TJ = 25°C
2
0
0
25
50
75
100 125
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
8
V_CE = 600V
V_GE = 15V
Eon, 50A
6
R_G = 5Ω
4
Eoff, 50A
2
Eon, 25A
Eoff, 25A
0
0
25
50
75
100 125
TJ, Junction Temperature (°C)
www.microsemi.com
5-6