APTGF50TA120PG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Triple phase leg NPT IGBT Power Module

APTGF50TA120PG
Triple phase leg
NPT IGBT Power Module
VBUS1
G1
VBUS2
G3
VBUS3
G5
E1
E3
E5
U
V
W
G2
E2
0/VBUS1
G4
E4
0/VBUS2
G6
E6
0/VBUS3
VBUS 1
VBUS 2
VBUS 3
G1
G3
G5
0/VBUS 1
E1
0/VBUS 2
E3
0/VBUS 3
E5
E2
E4
E6
G2
G4
G6
U
V
W
V_CES = 1200V
I_C = 50A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_c = 25°C
75
T_c = 80°C
50
A
I_CM Pulsed Collector Current
T_c = 25°C
150
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
312
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 100A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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