APTGF30TL60T3G Datasheet, PDF (5/8 Pages) Microsemi Corporation – Three level inverter NPT IGBT Power Module

Q1 to Q4 Typical performance curve
Output characteristics (V_GE=15V)
60
250µs Pulse Test
50 ^{< 0.5% Duty cycle}
40
T_J=125°C
30
T_J=25°C
20
10
0
0
1
2
3
4
V_CE, Collector to Emitter Voltage (V)
Transfer Characteristics
80
250µs Pulse Test
< 0.5% Duty cycle
60
40
20
0
0
T_J=125°C
T_J=25°C
1 2 3 4 5 6 7 8 9 10
V_GE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
25
50
75
100
125
T_J, Junction Temperature (°C)
APTGF30TL60T3G
50
37.5
Output Characteristics (V_GE=10V)
250µs Pulse Test
< 0.5% Duty cycle
T_J=25°C
25
12.5
T_J=125°C
0
0
1
2
3
4
V_CE, Collector to Emitter Voltage (V)
18
16
14
12
10
8
6
4
2
0
0
I_C = 30A
T_J = 25°C
20
Gate Charge
V_CE=120V
V_CE=300V
V_CE=480V
40 60 80 100 120
Gate Charge (nC)
DC Collector Current vs Case Temperature
50
40
30
20
10
0
25
50
75 100 125 150
T_C, Case Temperature (°C)
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