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APTGF30TL60T3G Datasheet, PDF (1/8 Pages) Microsemi Corporation – Three level inverter NPT IGBT Power Module | |||
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APTGF30TL60T3G
Three level inverter
NPT IGBT Power Module
VCES = 600V
IC = 30A @ Tc = 80°C
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Application
⢠Solar converter
⢠Uninterruptible Power Supplies
Features
⢠Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
⢠High level of integration
⢠Internal thermistor for temperature monitoring
Benefits
⢠Stable temperature behavior
⢠Very rugged
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Easy paralleling due to positive TC of VCEsat
⢠Low profile
⢠RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 â¦
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate â Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Max ratings
Unit
600
V
TC = 25°C
42
TC = 80°C
30
A
TC = 25°C
100
±20
V
TC = 25°C
140
W
Tj = 125°C
60A@500V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-8
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