APTGF100A120TG Datasheet, PDF (5/6 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module

Turn-On Delay Time vs Collector Current
45
V_CE = 600V
40 ^{RG = 2.5Ω}
V_GE = 15V
35
30
25
0
50
100
150
200
250
I_CE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
180
V_CE = 600V
RG = 2.5Ω
140
100
60
V_GE=15V
20
0
50
100 150 200 250
I_CE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
56
48
V_CE = 600V
T_J=125°C,
R_G = 2.5Ω
V_GE=15V
40
32
24
T_J=25°C,
16
V_GE=15V
8
0
0
50 100 150 200 250
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
36
32
V_CE = 600V
V_GE = 15V
Eon, 100A
28
T_J= 125°C
24
20
Eoff, 100A
16
12
Eon, 50A
8
4
Eoff, 50A
0
0
5
10
15
20
25
Gate Resistance (Ohms)
APTGF100A120TG
Turn-Off Delay Time vs Collector Current
400
350
VGE=15V,
T_J=125°C
300
250
VCE = 600V
R_G = 2.5Ω
200
V_GE=15V,
T_J=25°C
0
50
100 150 200 250
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
50
T_J = 125°C
40
30
20
0
T_J = 25°C
VCE = 600V, VGE = 15V, RG = 2.5Ω
50
100 150 200 250
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
16
VCE = 600V
V_GE = 15V
12
R_G = 2.5Ω
T_J = 125°C
8
TJ = 25°C
4
0
0
50 100 150 200 250
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
16
V_CE = 600V
V_GE = 15V
Eon, 100A
12 ^{RG = 2.5Ω}
8
Eoff, 100A
4
Eon, 50A
Eoff, 50A
0
0
25
50
75
100 125
TJ, Junction Temperature (°C)
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