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APTGF100A120TG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module | |||
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APTGF100A120TG
Phase leg
NPT IGBT Power Module
VCES = 1200V
IC = 100A @ Tc = 80°C
VBUS
NTC2
Q1
G1
E1
Q2
G2
E2
OUT
0/VBU S
NTC1
VBUS
E1
G1
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate â Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
⢠Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency
operation
⢠Stable temperature behavior
⢠Very rugged
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Easy paralleling due to positive TC of VCEsat
⢠Low profile
⢠RoHS compliant
Max ratings Unit
1200
V
Tc = 25°C
135
Tc = 80°C
100
A
Tc = 25°C
300
±20
V
Tc = 25°C
568
W
Tj = 150°C 200A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
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