APTC80A10SCTG Datasheet, PDF (5/7 Pages) Microsemi Corporation – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50
0
50
100 150
T_J, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
50
100
150
T_C, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
100
Ciss
Coss
Crss
10
0
10 20 30 40 50
V_DS, Drain to Source Voltage (V)
APTC80A10SCTG
ON resistance vs Temperature
3.0
VGS=10V
2.5 ^{ID= 21A}
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T_J, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by
R_{DSo n}
100µs
10
Single pulse
1 T_J=150°C
T_C=25°C
1ms
100ms
0
1
10
100
1000
V_DS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
14
I_D=42A
T_J=25°C
12
10
V_DS=160V
V_DS=400V
8
6
V_DS=640V
4
2
0
0 50 100 150 200 250 300
Gate Charge (nC)
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