APTC80A10SCTG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC80A10SCTG
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
VBUS
NTC2
Q1
V_DSS = 800V
R_DSon = 100mΩ max @ Tj = 25°C
I_D = 42A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
G1
O UT
S1
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
Q2
G2
S2
0/VBU S
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
NTC1
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
VBUS
0/ VBUS
OUT
O UT
S1
S2
NTC2
G1
G2
NTC1
Absolute maximum ratings
Symbol
Parameter
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
800
V
I_D Continuous Drain Current
T_c = 25°C
42
T_c = 80°C
32
A
I_DM Pulsed Drain current
168
V_GS Gate - Source Voltage
±30
V
R_DSon Drain - Source ON Resistance
100
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
416
W
I_AR Avalanche current (repetitive and non repetitive)
17
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
0.5
mJ
670
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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