APT50M60L2VR_04 Datasheet, PDF (5/5 Pages) Microsemi Corporation – POWER MOS V® MOSFET

Typical Performance Curves
10%
Gate Voltage
T_J125°C
t_d(on)
90%
Drain Current
t_r
5%
5%
10%
Drain Voltage
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
V_DD
APT60DF60
I_C V_CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT50M60L2VR
90%
t_d(off)
Gate Voltage
T_J125°C
Drain Voltage
90%
Switching Energy
t_f
10%
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
TO-264 MAX^TM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.