APT50M60L2VR_04 Datasheet, PDF (4/5 Pages) Microsemi Corporation – POWER MOS V® MOSFET

308
OPERATION HERE
LIMITED BY R_DS (ON)
100
50
100µS
1mS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 77A
10mS
VDS = 100V
12
VDS = 250V
8
4
VDS = 400V
0
0 100 200 300 400 500 600 700 800
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
700
600
500
400
300
V_DD = 333V
R_G = 5Ω
T_J = 125°C
L = 100µH
t_d(off)
200
100
t_d(on)
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
7,000
6,000
5,000
V_DD = 333V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
4,000
3,000
2,000
1,000
E_off
E_on
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT50M60L2VR
Ciss
Coss
Crss
100
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
250
V_DD = 333V
R_G = 5Ω
200 ^{TJ = 125°C}
L = 100µH
t_f
150
100
50
t_r
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
25,000
V_DD = 333V
I_D = 77A
20,000 ^{TJ = 125°C}
L = 100µH
E_ON includes
diode reverse recovery.
E_off
15,000
10,000
5,000
E_on
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE