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APT50M60L2VFR_04 Datasheet, PDF (5/5 Pages) Microsemi Corporation – POWER MOS V® FREDFET
Typical Performance Curves
10%
Gate Voltage
TJ125°C
td(on)
90%
Drain Current
tr
5%
5%
10%
Drain Voltage
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT60DF60
IC VCE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT50M60L2VFR
90%
td(off)
Gate Voltage
TJ125°C
Drain Voltage
90%
Switching Energy
tf
10%
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.