APT50M60L2VFR_04 Datasheet, PDF (2/5 Pages) Microsemi Corporation – POWER MOS V® FREDFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 250V
I_D = 77A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 250V
I_D = 77A @ 25°C
R_G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 333V, V_GS = 15V
I_D = 77A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 333V, V_GS = 15V
I_D = 77A, R_G = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
V_{SD Diode Forward Voltage} 2 _{(VGS = 0V, IS = -77A)}
dv_/dt
Peak Diode Recovery ^dv/_dt ⁵
t_rr
Reverse Recovery Time
(I_S = -77A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
Reverse Recovery Charge
Q_rr
(I_S = -77A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
Peak Recovery Current
I_RRM
(I_S = -77A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
APT50M60L2VFR
MIN TYP MAX UNIT
10600
1800
pF
795
560
70
nC
285
20
25
ns
80
8
1510
3450
µJ
2065
3830
MIN TYP MAX UNIT
77 _Amps
308
1.3 Volts
15 V/ns
300
ns
600
2.6
µC
10
17
Amps
34
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.15
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 1.08mH, R_G = 25Ω, Peak I_L = 77A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D77A ^di/_dt ≤ 700A/µs V_R ≤ 500V T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.14
0.9
0.12
0.7
0.10
0.08
0.06
0.04
0.02
0
10^-5
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION