APT40GT60BRG Datasheet, PDF (5/6 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
C_ies
C_oes
C_res
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT40GT60BR
V_CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
D = 0.9
0.7
0.5
0.3
0.1
0.05
SINGLE PULSE
Note :
t1
t2
Duty Factor D = ^t1/t2
Peak T _J = P _DM x Z _θJC + T _C
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
T _J (°C)
T _C (°C)
Dissipated Powe r
(Watts )
.07172 .1434 .1451
.00157
.0040
0.1270
Z_EXT are the external therma l
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling onl y
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 400V
R_G = 1.0Ω
75°C
F
max
=
min
(f_max,
f
max2⁾
0.05
f_max1 = _{t d(on) + tr + td(off) + tf}
f_max2 =
P_diss - P _cond
E _on2 + E _off
P_diss =
T_J - T _C
R _θJC
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current