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| APT40GT60BRG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Thunderbolt IGBT | |||
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APT40GT60BR
600V, 80A, VCE(ON) = 2.1V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged-
ness and ultrafast switching speed.
Features
⢠Low Forward Voltage Drop
⢠RBSOA and SCSOA Rated
⢠Low Tail Current
⢠High Frequency Switching to 150KHz
⢠RoHS Compliant
⢠Ultra Low Leakage Current
TO-247
G
C
E
C
G
E
Maximum Ratings
Symbol Parameter
VCES
VGE
IC1
IC2
ICM
SSOA
PD
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
TJ, TSTG Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise speciï¬ed.
Ratings
Unit
600
Volts
±20
80
40
Amps
160
160A @ 600V
345
Watts
-55 to 150
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA)
Gate Threshold Voltage (VCE = VGE, IC = 500μA, Tj = 25°C)
VCE(ON)
ICES
IGES
Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Min Typ Max Unit
600
-
-
3
4
5
Volts
1.6
2.15
2.5
-
-
2.8
-
-
80
μA
-
-
2000
-
-
100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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