APT40GT60BR Datasheet, PDF (5/6 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.

Typical Performance Curves
100,000
C_ies
10,000
1000
C_oes
C_res
100
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT40GT60BR
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.40
0.35
D = 0.9
0.30
0.7
0.25
0.20
0.5
Note:
0.15
t1
0.3
0.10
t2
0.05
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10 ^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
.07172 .1434 .1451
.00157
.0040
0.1270
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
80
70
60
50
40
30
20 ^TJ ^{= 125°C}
T_C = 75°C
D = 50 %
10 V_CE = 400V
R_G = 1.0Ω
0
25
35
45
55
75°C
65
F
max
=
min
(f_max,
f
max2⁾
0.05
f_max1 = _{t d(on) + tr + td(off) + tf}
f_max2 =
P_diss - P _cond
E _on2 + E _off
P_diss =
T_J - T _C
R _θJC
75
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current