APT40GT60BR Datasheet, PDF (3/6 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.

Typical Performance Curves
100
90
V_GE = 15V
80
70
T_J= 125°C
60
T_J= 25°C
50
40
30
20
T_J= 55°C
10
0
0
1
2
3
4
5
6
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
160
140
250μs PULSE
TEST<0.5 % DUTY
CYCLE
120
T_J= 25°C
100
80
60
40
20
T_J= 125°C
T_J= -55°C
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
5
4
I_C = 80A
3
I_C = 40A
2
I_C = 200A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
150
15V
13V
APT40GT60BR
125
11V
100
10V
75
9V
50
8V
7V
25
6V
0
0
5
10
15
20
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
16
I_C = 40A
14
T_J = 25°C
12
V_CE = 120V
10
V_CE = 300V
8
V_CE = 480V
6
4
2
0
0
6
20 40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
FIGURE 4, Gate charge
5
4
I_C = 80A
3
I_C = 40A
2
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I_C = 20A
0
25
50
75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
80
70
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature