APT35GN120B Datasheet, PDF (5/6 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
4,000
C_ies
1,000
500
100
50
C_0es
C_res
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT35GN120B_S(G)
120
100
80
60
40
20
0
0 200 400 600 800 1000 1200 1400
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10^-5
0.9
0.7
0.5
Note:
0.3
t1
0.1
SINGLE PULSE
0.05
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
140
F
max
=
min
(f_max,
f
max2⁾
10
0.05
f_max1 = _{t d(on) + tr + td(off) + tf}
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 800V
1 ^{RG = 2.2Ω}
f_max2 =
P_diss - P _cond
E _on2 + E _off
P_diss =
T_J - T _C
R _θJC
10 20 30 40 50 60 70
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current