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| APT35GN120B Datasheet, PDF (1/6 Pages) Advanced Power Technology – IGBT | |||
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TYPICAL PERFORMANCE CURVES
APT35GN120B APAT3P5TG3N51G20NB1_2S0(GS)
APT35GN120BG APT35GN120SG
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTâs
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior VCE(on) performance. Easy paralleling results from very tight
parameter distribution and slightly positive VCE(on) temperature coefï¬cient. Built-in
gate resistance ensures ultra-reliable operation. Low gate charge simpliï¬es gate drive
design and minimizes losses.
⢠1200V NPT Field Stop
⢠Trench Gate: Low VCE(on)
⢠Easy Paralleling
⢠10µs Short Circuit Capability
⢠Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
(B)
TO-247
G
C
E
D3PAK
(S)
C
G
E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT35GN120B_S(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
94
46
105
105A @ 1200V
379
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RGINT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1200
5
5.8 6.5
1.4 1.7 2.1
1.9
100
TBD
600
6
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com
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