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APT31N80JC3 Datasheet, PDF (5/5 Pages) Advanced Power Technology – Super Junction MOSFET
Typical Performance Curves
10 %
t
d(on)
90%
t
r
5%
10 %
Switching Energy
Gate Voltage
TJ = 125 C
Drain Current
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF100
VDD
IC VCE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT31N80JC3
90%
td(off)
tf
90%
Gate Voltage
Drain Voltage
10%
0 Drain Current
TJ = 125 C
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP®is a Registered Trademark of SGS Thomson. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.