APT31N80JC3 Datasheet, PDF (3/5 Pages) Advanced Power Technology – Super Junction MOSFET

Typical Performance Curves
Dissipated Power
(Watts)
T_J ( C)
T_C ( C)
0.144
0.226
0.00671
0.141
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
90
80
70
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
60
50
40
30
20
TJ = +25°C
10 TJ = +125°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
35
30
25
20
15
10
5
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3.0
I_D = 17A
V_GS = 10V
2.5
2.0
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
50
VGS =15 & 10V
40
30
APT31N80JC3
6.5V
6V
5.5V
5V
20
4.5V
10
4V
0
0
2
4
6
8
10 12
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
NORMALIZED TO
V_GS = 10V @ 17A
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0 10 20 30 40 50 60
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE