APT30GS60BRDL Datasheet, PDF (5/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES
200
100
I_CM
200
100
I_CM
APT30GS60BRDL(G)
10
V_{CE(on) 13µs}
100µs
1ms
1
10ms
100ms
DC line
T_J = 125°C
T_C = 75°C
0.1
1
10
100
800
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
10
V_CE(on) 13µs
100µs
1ms
1
T_J = 150°C
T_C = 25°C
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
I_C = I_{C(TC = 25°C)}*(T_J - T_C)/125
1
10
100
800
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 18, Maximum Forward Safe Operating Area
0.60
0.50
0.40
0.30
0.20
0.10
0
10^-5
0.9
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
0.0838
0.207
0.209
0.00245
0.00548
0.165
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 20, Transient Thermal Impedance Model
120
T_C = 75°C
T_C = 100°C
10
F
max
=
min
(f_max,
f
max2⁾
0.05
f_max1 = _{t d(on) + tr + td(off) + tf}
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 400V
1 ^{RG = 9.1Ω}
f_max2 =
P_diss - P _cond
E _on2 + E _off
P_diss =
T_J - T _C
R _θJC
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current