APT30GS60BRDL Datasheet, PDF (1/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

APT30GS60BRDL(G)
600V, 30A, V_CE(ON) = 2.8V Typical
Resonant Mode Combi IGBT^®
The Thunderbolt HS^™ IGBT used in this resonant mode combi is based on thin wafer non-punch through
(NPT) technology similar to the Thunderbolt^® series, but trades higher V_CE(ON) for significantly lower
turn-on energy E_off. The low switching losses enable operation at switching frequencies over 100kHz,
approaching power MOSFET performance but lower cost.
TO-247
Single die
IGBT with
separate DL
An extremely tight parameter distribution combined with a positive V_CE(ON) temperature coefficient make it
easy to parallel Thunderbolts HS^™ IGBT's. Controlled slew rates result in very good noise and oscillation
immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor
drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi
versions are packaged with a high speed, soft recovery DL series diode.
G
C
E
C
G
Features
Typical Applications
E
• Fast Switching with low EMI
• Tight parameter distribution
• Very Low E_OFF for Maximum Efficiency • Easy paralleling
• Short circuit rated
• Low Forward Diode Voltage (VF)
• Low Gate Charge
• Ultrasoft Recovery Diode
• RoHS Compliant
• ZVS Phase Shifted Bridge
• Resonant Mode Switching
• Phase Shifted Bridge
• Welding
• Induction heating
• High Frequency SMPS
Absolute Maximum Ratings
Symbol
I _C1
I _C2
I _CM
V_GE
SSOA
t_SC
Parameter
Continuous Collector Current T_C = @ 25°C
Continuous Collector Current T_C = @ 100°C
Pulsed Collector Current ¹
Gate-Emitter Voltage
Switching Safe Operating Area
Short Circut Withstand Time ³
Rating
Unit
54
30
A
113
±30V
V
113
10
µs
Thermal and Mechanical Characteristics
Symbol Parameter
P_D
Total Power Dissipation T_C = @ 25°C
R_{θJC Junction to Case Thermal Resistance}
R_θCS
T_J, T_STG
T_L
Case to Sink Thermal Resistance, Flat Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
W_{T Package Weight}
IGBT
Diode
Min Typ Max Unit
-
-
250
W
-
-
0.50
1.0 °C/W
-
0.11
-
-55
-
150
°C
-
-
300
-
0.22
-
oz
-
5.9
-
g
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com