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APT20GN60B Datasheet, PDF (5/6 Pages) Advanced Power Technology – IGBT
TYPICAL PERFORMANCE CURVES
2,000
Cies
1,000
500
100
50
Coes
Cres
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT20GN60B_S(G)
70
60
50
40
30
20
10
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
1.20
1.00
D = 0.9
0.80
0.7
0.60
0.40
0.20
0
10-5
0.5
Note:
0.3
SINGLE PULSE
0.1
0.05
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
140
100
50
Fmax = min (fmax, f max2)
0.05
fmax1 = t d(on) + tr + td(off) + tf
TJ = 125°C
TC = 75°C
10
D = 50 %
VCE = 400V
7 RG = 4.3Ω
5
10
15
20
25
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
30
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current